Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

S. Choopun; R. D. Vispute; W. Noch; A. Balsamo; R. P. Sharma; T. Venkatesan; A. Iliadis; D. C. Look

doi:10.1063/1.125503

Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3947-3949
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	25
DOIs	https://doi.org/10.1063/1.125503
State	Published - Dec 20 1999

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125503

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title = "Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire",

author = "S. Choopun and Vispute, {R. D.} and W. Noch and A. Balsamo and Sharma, {R. P.} and T. Venkatesan and A. Iliadis and Look, {D. C.}",

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AU - Choopun, S.

AU - Vispute, R. D.

AU - Noch, W.

AU - Balsamo, A.

AU - Sharma, R. P.

AU - Venkatesan, T.

AU - Iliadis, A.

AU - Look, D. C.

PY - 1999/12/20

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

ASJC Scopus Subject Areas

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