Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

S. Choopun; R. D. Vispute; W. Noch; A. Balsamo; R. P. Sharma; T. Venkatesan; A. Iliadis; D. C. Look

doi:10.1063/1.125503

Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

S. Choopun
, R. D. Vispute
, W. Noch
, A. Balsamo
, R. P. Sharma
, T. Venkatesan
, A. Iliadis
, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3947-3949
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	25
DOIs	https://doi.org/10.1063/1.125503
State	Published - Dec 20 1999

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125503

Cite this

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title = "Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire",

author = "S. Choopun and Vispute, \{R. D.\} and W. Noch and A. Balsamo and Sharma, \{R. P.\} and T. Venkatesan and A. Iliadis and Look, \{D. C.\}",

year = "1999",

month = dec,

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doi = "10.1063/1.125503",

language = "English",

volume = "75",

pages = "3947--3949",

journal = "Applied Physics Letters",

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T1 - Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

AU - Choopun, S.

AU - Vispute, R. D.

AU - Noch, W.

AU - Balsamo, A.

AU - Sharma, R. P.

AU - Venkatesan, T.

AU - Iliadis, A.

AU - Look, D. C.

PY - 1999/12/20

Y1 - 1999/12/20

UR - https://www.scopus.com/pages/publications/0000900190

UR - https://www.scopus.com/pages/publications/0000900190#tab=citedBy

U2 - 10.1063/1.125503

DO - 10.1063/1.125503

M3 - Article

AN - SCOPUS:0000900190

SN - 0003-6951

VL - 75

SP - 3947

EP - 3949

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

ASJC Scopus Subject Areas

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