Persistent n-type photoconductivity in p-type ZnO

B. Claflin; D. C. Look; S. J. Park; G. Cantwell

doi:10.1016/j.jcrysgro.2005.10.035

Persistent n-type photoconductivity in p-type ZnO

B. Claflin, D. C. Look, S. J. Park, G. Cantwell

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	16-22
Number of pages	7
Journal	Journal of Crystal Growth
Volume	287
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.035
State	Published - Jan 18 2006
Event	Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - Duration: Jul 3 2005 → Jul 8 2005

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A1. Mixed conduction
A1. Persistent photoconductivity (ppc)
A1. Photo-Hall-effect
B1. p-type ZnO
B1. Zinc oxide
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2005.10.035

Cite this

@article{55b081e69c3c4655a848b893a27a2f93,

title = "Persistent n-type photoconductivity in p-type ZnO",

keywords = "A1. Mixed conduction, A1. Persistent photoconductivity (ppc), A1. Photo-Hall-effect, B1. p-type ZnO, B1. Zinc oxide, B2. Semiconducting II-VI materials",

author = "B. Claflin and Look, {D. C.} and Park, {S. J.} and G. Cantwell",

year = "2006",

month = jan,

day = "18",

doi = "10.1016/j.jcrysgro.2005.10.035",

language = "English",

volume = "287",

pages = "16--22",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1",

note = "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials ; Conference date: 03-07-2005 Through 08-07-2005",

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TY - JOUR

T1 - Persistent n-type photoconductivity in p-type ZnO

AU - Claflin, B.

AU - Look, D. C.

AU - Park, S. J.

AU - Cantwell, G.

PY - 2006/1/18

Y1 - 2006/1/18

KW - A1. Mixed conduction

KW - A1. Persistent photoconductivity (ppc)

KW - A1. Photo-Hall-effect

KW - B1. p-type ZnO

KW - B1. Zinc oxide

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=29944445194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29944445194&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.10.035

DO - 10.1016/j.jcrysgro.2005.10.035

M3 - Conference article

AN - SCOPUS:29944445194

SN - 0022-0248

VL - 287

SP - 16

EP - 22

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials

Y2 - 3 July 2005 through 8 July 2005

ER -

Persistent n-type photoconductivity in p-type ZnO

ASJC Scopus Subject Areas

Keywords

Access to Document

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