Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

Buguo Wang; Jason Anders; Kevin Leedy; Michael Schuette; David Look

doi:10.1117/12.2290625

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

Buguo Wang, Jason Anders, Kevin Leedy, Michael Schuette, David Look

Future of Semiconductors, a National Science Foundation Program

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Oxide-Based Materials and Devices IX
Editors	David J. Rogers, Ferechteh H. Teherani, David C. Look
Publisher	SPIE
ISBN (Electronic)	9781510615519
DOIs	https://doi.org/10.1117/12.2290625
State	Published - 2018
Event	Oxide-Based Materials and Devices IX 2018 - San Francisco, United States Duration: Jan 28 2018 → Feb 1 2018

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10533
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices IX 2018
Country/Territory	United States
City	San Francisco
Period	1/28/18 → 2/1/18

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

electronic defects
InGaZnO (IGZO)
persistent photocurrent (PPC), thermally stimulated current (TSC) spectroscopy
photocurrent (PC)
pulse laser deposition (PLD), dark current (DC)
thermal annealing

Access to Document

10.1117/12.2290625

Cite this

Wang, B., Anders, J., Leedy, K., Schuette, M., & Look, D. (2018). Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy. In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices IX Article 1053314 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533). SPIE. https://doi.org/10.1117/12.2290625

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy. / Wang, Buguo; Anders, Jason; Leedy, Kevin et al.
Oxide-Based Materials and Devices IX. ed. / David J. Rogers; Ferechteh H. Teherani; David C. Look. SPIE, 2018. 1053314 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, B, Anders, J, Leedy, K, Schuette, M & Look, D 2018, Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy. in DJ Rogers, FH Teherani & DC Look (eds), Oxide-Based Materials and Devices IX., 1053314, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10533, SPIE, Oxide-Based Materials and Devices IX 2018, San Francisco, United States, 1/28/18. https://doi.org/10.1117/12.2290625

Wang B, Anders J, Leedy K, Schuette M, Look D. Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy. In Rogers DJ, Teherani FH, Look DC, editors, Oxide-Based Materials and Devices IX. SPIE. 2018. 1053314. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2290625

Wang, Buguo ; Anders, Jason ; Leedy, Kevin et al. / Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy. Oxide-Based Materials and Devices IX. editor / David J. Rogers ; Ferechteh H. Teherani ; David C. Look. SPIE, 2018. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy",

keywords = "electronic defects, InGaZnO (IGZO), persistent photocurrent (PPC), thermally stimulated current (TSC) spectroscopy, photocurrent (PC), pulse laser deposition (PLD), dark current (DC), thermal annealing",

author = "Buguo Wang and Jason Anders and Kevin Leedy and Michael Schuette and David Look",

year = "2018",

doi = "10.1117/12.2290625",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, {David J.} and Teherani, {Ferechteh H.} and Look, {David C.}",

booktitle = "Oxide-Based Materials and Devices IX",

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TY - GEN

T1 - Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

AU - Wang, Buguo

AU - Anders, Jason

AU - Leedy, Kevin

AU - Schuette, Michael

AU - Look, David

PY - 2018

Y1 - 2018

KW - electronic defects

KW - InGaZnO (IGZO)

KW - persistent photocurrent (PPC), thermally stimulated current (TSC) spectroscopy

KW - photocurrent (PC)

KW - pulse laser deposition (PLD), dark current (DC)

KW - thermal annealing

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U2 - 10.1117/12.2290625

DO - 10.1117/12.2290625

M3 - Conference contribution

AN - SCOPUS:85047402504

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices IX

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

A2 - Look, David C.

PB - SPIE

T2 - Oxide-Based Materials and Devices IX 2018

Y2 - 28 January 2018 through 1 February 2018

ER -

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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Cite this