Photoconductive THz Sources Driven at 1550 nm

Elliott R. Brown, Björn Globisch, Guillermo Carpintero, Alejandro Rivera, Daniel Segovia-Vargas, Andreas Steiger

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter emphasizes Terahertz (THz) metrology–one of the most problematic and daunting topics in the THz field, especially the measurement of THz power. Through collaboration with the PTB in Berlin, Germany, it describes perhaps the most accurate THz power sensor in the world today, and demonstrates it an exemplary fashion. Optical-fiber coupling of THz PC devices is highly desirable for many reasons, including compactness of system integration, mechanical and thermal stability, and cost. 1550-nm operation is advantageous compared to 780 nm for reasons pertaining to optical-fiber technology. There are other issues too that are usually under-emphasized in THz device analyses. The three are ohmic contact effects, thermal effects, and circuit power limitations. The chapter addresses many pitfalls in THz power measurements, such as the leakage of 1550-nm drive laser power, and far-infrared thermal re-emission from the substrate on which the device is fabricated.
Original languageEnglish
Title of host publicationFundamentals of Terahertz Devices and Applications
Publisherwiley
Pages43-136
Number of pages94
ISBN (Electronic)9781119460749
ISBN (Print)9781119460718
DOIs
StatePublished - Jan 1 2021

ASJC Scopus Subject Areas

  • General Engineering
  • General Physics and Astronomy

Keywords

  • Thin Film
  • Optics
  • Terahertz spectroscopy

Disciplines

  • Optics

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