Photoexcited carrier trapping and recombination at Fe centers in GaN

T. K. Uždavinys; S. Marcinkevičius; J. H. Leach; K. R. Evans; D. C. Look

doi:10.1063/1.4953219

Photoexcited carrier trapping and recombination at Fe centers in GaN

T. K. Uždavinys, S. Marcinkevičius, J. H. Leach, K. R. Evans, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	215706
Journal	Journal of Applied Physics
Volume	119
Issue number	21
DOIs	https://doi.org/10.1063/1.4953219
State	Published - Jun 7 2016

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.4953219

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title = "Photoexcited carrier trapping and recombination at Fe centers in GaN",

author = "U{\v z}davinys, {T. K.} and S. Marcinkevi{\v c}ius and Leach, {J. H.} and Evans, {K. R.} and Look, {D. C.}",

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doi = "10.1063/1.4953219",

language = "English",

volume = "119",

journal = "Journal of Applied Physics",

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T1 - Photoexcited carrier trapping and recombination at Fe centers in GaN

AU - Uždavinys, T. K.

AU - Marcinkevičius, S.

AU - Leach, J. H.

AU - Evans, K. R.

AU - Look, D. C.

PY - 2016/6/7

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Photoexcited carrier trapping and recombination at Fe centers in GaN

ASJC Scopus Subject Areas

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