Photoluminescence of m-plane GaN grown on m-plane sapphire by MOCVD

Qing S. Paduano; David W. Weyburne; David C. Look

doi:10.1002/pssc.201300328

Photoluminescence of m-plane GaN grown on m-plane sapphire by MOCVD

Qing S. Paduano, David W. Weyburne, David C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	778-781
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201300328
State	Published - Apr 2014

ASJC Scopus Subject Areas

Condensed Matter Physics

Keywords

Defects
Nitride
Photoluminescence
Stacking faults

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10.1002/pssc.201300328

Cite this

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title = "Photoluminescence of m-plane GaN grown on m-plane sapphire by MOCVD",

keywords = "Defects, Nitride, Photoluminescence, Stacking faults",

author = "Paduano, {Qing S.} and Weyburne, {David W.} and Look, {David C.}",

year = "2014",

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volume = "11",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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AU - Paduano, Qing S.

AU - Weyburne, David W.

AU - Look, David C.

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KW - Defects

KW - Nitride

KW - Photoluminescence

KW - Stacking faults

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ER -

Photoluminescence of m-plane GaN grown on m-plane sapphire by MOCVD

ASJC Scopus Subject Areas

Keywords

Access to Document

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