Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Z. Q. Fang; D. C. Look; X. L. Wang; Jung Han; F. A. Khan; I. Adesida

doi:10.1063/1.1560562

Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Z. Q. Fang, D. C. Look, X. L. Wang, Jung Han, F. A. Khan, I. Adesida

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1562-1564
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	10
DOIs	https://doi.org/10.1063/1.1560562
State	Published - Mar 10 2003

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1560562

Cite this

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title = "Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition",

author = "Fang, \{Z. Q.\} and Look, \{D. C.\} and Wang, \{X. L.\} and Jung Han and Khan, \{F. A.\} and I. Adesida",

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journal = "Applied Physics Letters",

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T1 - Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Wang, X. L.

AU - Han, Jung

AU - Khan, F. A.

AU - Adesida, I.

PY - 2003/3/10

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SP - 1562

EP - 1564

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

ASJC Scopus Subject Areas

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