Point defect characterization of GaN and ZnO

D. C. Look; D. C. Reynolds; Z. Q. Fang; J. W. Hemsky; J. R. Sizelove; R. L. Jones

doi:10.1016/S0921-5107(99)00115-4

Point defect characterization of GaN and ZnO

D. C. Look, D. C. Reynolds, Z. Q. Fang, J. W. Hemsky, J. R. Sizelove, R. L. Jones

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	30-32
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	66
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(99)00115-4
State	Published - Dec 1 1999
Event	Proceedings of the 1998 4th International Workshop on Expert Evaluation and Control of Semiconductor Materials and Technologies (EXMATEC '98) - Wales, UK Duration: Jun 22 1998 → Jun 24 1998

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

ZnO
GaN
Electron irradiation

Disciplines

Physics

Access to Document

10.1016/S0921-5107(99)00115-4

Cite this

@article{9b58295660fd45faad59f1790fa810a5,

title = "Point defect characterization of GaN and ZnO",

keywords = "ZnO, GaN, Electron irradiation",

author = "Look, {D. C.} and Reynolds, {D. C.} and Fang, {Z. Q.} and Hemsky, {J. W.} and Sizelove, {J. R.} and Jones, {R. L.}",

year = "1999",

month = dec,

day = "1",

doi = "10.1016/S0921-5107(99)00115-4",

language = "English",

volume = "66",

pages = "30--32",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

number = "1",

note = "Proceedings of the 1998 4th International Workshop on Expert Evaluation and Control of Semiconductor Materials and Technologies (EXMATEC '98) ; Conference date: 22-06-1998 Through 24-06-1998",

}

TY - JOUR

T1 - Point defect characterization of GaN and ZnO

AU - Look, D. C.

AU - Reynolds, D. C.

AU - Fang, Z. Q.

AU - Hemsky, J. W.

AU - Sizelove, J. R.

AU - Jones, R. L.

PY - 1999/12/1

Y1 - 1999/12/1

KW - ZnO

KW - GaN

KW - Electron irradiation

UR - http://www.scopus.com/inward/record.url?scp=0033283664&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033283664&partnerID=8YFLogxK

UR - https://corescholar.libraries.wright.edu/physics/324

U2 - 10.1016/S0921-5107(99)00115-4

DO - 10.1016/S0921-5107(99)00115-4

M3 - Conference article

AN - SCOPUS:0033283664

SN - 0921-5107

VL - 66

SP - 30

EP - 32

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

T2 - Proceedings of the 1998 4th International Workshop on Expert Evaluation and Control of Semiconductor Materials and Technologies (EXMATEC '98)

Y2 - 22 June 1998 through 24 June 1998

ER -

Point defect characterization of GaN and ZnO

ASJC Scopus Subject Areas

Keywords

Disciplines

Access to Document

Other files and links

Cite this