Point defects in undoped semi-insulating GaAs: Correlation between thermally stimulated current and positron annihilation spectroscopies

Z. Q. Fang; D. C. Look; S. Kuisma; K. Saarinen; P. Hautojarvi

Point defects in undoped semi-insulating GaAs: Correlation between thermally stimulated current and positron annihilation spectroscopies

Z. Q. Fang, D. C. Look, S. Kuisma, K. Saarinen, P. Hautojarvi

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	149-154
Number of pages	6
State	Published - 1996
Event	Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Duration: Apr 29 1996 → May 3 1996

Conference

Conference	Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9
City	Toulouse, Fr
Period	4/29/96 → 5/3/96

ASJC Scopus Subject Areas

General Engineering

Cite this

Point defects in undoped semi-insulating GaAs: Correlation between thermally stimulated current and positron annihilation spectroscopies. / Fang, Z. Q.; Look, D. C.; Kuisma, S. et al.
1996. 149-154 Paper presented at Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9, Toulouse, Fr.

Research output: Contribution to conference › Paper › peer-review

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title = "Point defects in undoped semi-insulating GaAs: Correlation between thermally stimulated current and positron annihilation spectroscopies",

author = "Fang, {Z. Q.} and Look, {D. C.} and S. Kuisma and K. Saarinen and P. Hautojarvi",

year = "1996",

language = "English",

pages = "149--154",

note = "Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 ; Conference date: 29-04-1996 Through 03-05-1996",

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TY - CONF

T1 - Point defects in undoped semi-insulating GaAs

T2 - Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Kuisma, S.

AU - Saarinen, K.

AU - Hautojarvi, P.

PY - 1996

Y1 - 1996

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UR - http://www.scopus.com/inward/citedby.url?scp=0030411515&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030411515

SP - 149

EP - 154

Y2 - 29 April 1996 through 3 May 1996

ER -

Point defects in undoped semi-insulating GaAs: Correlation between thermally stimulated current and positron annihilation spectroscopies

Conference

ASJC Scopus Subject Areas

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Cite this