Process dependence of H passivation and doping in H-implanted ZnO

Z. Zhang; D. C. Look; R. Schifano; K. M. Johansen; B. G. Svensson; L. J. Brillson

doi:10.1088/0022-3727/46/5/055107

Process dependence of H passivation and doping in H-implanted ZnO

Z. Zhang, D. C. Look, R. Schifano, K. M. Johansen, B. G. Svensson, L. J. Brillson

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	055107
Journal	Journal of Physics D: Applied Physics
Volume	46
Issue number	5
DOIs	https://doi.org/10.1088/0022-3727/46/5/055107
State	Published - Feb 6 2013

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/46/5/055107

Cite this

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title = "Process dependence of H passivation and doping in H-implanted ZnO",

author = "Z. Zhang and Look, \{D. C.\} and R. Schifano and Johansen, \{K. M.\} and Svensson, \{B. G.\} and Brillson, \{L. J.\}",

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T1 - Process dependence of H passivation and doping in H-implanted ZnO

AU - Zhang, Z.

AU - Look, D. C.

AU - Schifano, R.

AU - Johansen, K. M.

AU - Svensson, B. G.

AU - Brillson, L. J.

PY - 2013/2/6

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M3 - Article

AN - SCOPUS:84872560685

SN - 0022-3727

VL - 46

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 5

M1 - 055107

ER -

Process dependence of H passivation and doping in H-implanted ZnO

ASJC Scopus Subject Areas

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