Properties of bulk scandium nitride crystals grown by physical vapor transport

Hayder Al-Atabi; Qiye Zheng; John S. Cetnar; David Look; David G. Cahill; James H. Edgar

doi:10.1063/1.5141808

Properties of bulk scandium nitride crystals grown by physical vapor transport

Hayder Al-Atabi, Qiye Zheng, John S. Cetnar, David Look, David G. Cahill, James H. Edgar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	132103
Journal	Applied Physics Letters
Volume	116
Issue number	13
DOIs	https://doi.org/10.1063/1.5141808
State	Published - Mar 30 2020

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Properties of bulk scandium nitride crystals grown by physical vapor transport",

author = "Hayder Al-Atabi and Qiye Zheng and Cetnar, \{John S.\} and David Look and Cahill, \{David G.\} and Edgar, \{James H.\}",

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year = "2020",

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doi = "10.1063/1.5141808",

language = "English",

volume = "116",

journal = "Applied Physics Letters",

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T1 - Properties of bulk scandium nitride crystals grown by physical vapor transport

AU - Al-Atabi, Hayder

AU - Zheng, Qiye

AU - Cetnar, John S.

AU - Look, David

AU - Cahill, David G.

AU - Edgar, James H.

PY - 2020/3/30

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VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132103

ER -

Properties of bulk scandium nitride crystals grown by physical vapor transport

ASJC Scopus Subject Areas

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