Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

C. D. Lee; V. Ramachandran; A. Sagar; R. M. Feenstra; D. W. Greve; W. L. Sarney; L. Salamanca-Riba; D. C. Look; Song Bai; W. J. Choyke; R. P. Devaty

doi:10.1007/s11664-001-0010-6

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

C. D. Lee, V. Ramachandran, A. Sagar, R. M. Feenstra, D. W. Greve, W. L. Sarney, L. Salamanca-Riba, D. C. Look, Song Bai, W. J. Choyke, R. P. Devaty

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	10
Pages (from-to)	162-169
Number of pages	8
Journal	Journal of Electronic Materials
Volume	30
Issue number	3
DOIs	https://doi.org/10.1007/s11664-001-0010-6
State	Published - 2001

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Dislocation density
GaN
Molecular beam epitaxy
Scanning tunneling microscopy
SiC

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10.1007/s11664-001-0010-6

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Lee, C. D., Ramachandran, V., Sagar, A., Feenstra, R. M., Greve, D. W., Sarney, W. L., Salamanca-Riba, L., Look, D. C., Bai, S., Choyke, W. J., & Devaty, R. P. (2001). Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Journal of Electronic Materials, 30(3), 162-169. Article 10. https://doi.org/10.1007/s11664-001-0010-6

@article{4dc225da479d47739f29b9a9b301ce62,

title = "Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy",

keywords = "Dislocation density, GaN, Molecular beam epitaxy, Scanning tunneling microscopy, SiC",

author = "Lee, \{C. D.\} and V. Ramachandran and A. Sagar and Feenstra, \{R. M.\} and Greve, \{D. W.\} and Sarney, \{W. L.\} and L. Salamanca-Riba and Look, \{D. C.\} and Song Bai and Choyke, \{W. J.\} and Devaty, \{R. P.\}",

year = "2001",

doi = "10.1007/s11664-001-0010-6",

language = "English",

volume = "30",

pages = "162--169",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "3",

}

TY - JOUR

T1 - Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

AU - Lee, C. D.

AU - Ramachandran, V.

AU - Sagar, A.

AU - Feenstra, R. M.

AU - Greve, D. W.

AU - Sarney, W. L.

AU - Salamanca-Riba, L.

AU - Look, D. C.

AU - Bai, Song

AU - Choyke, W. J.

AU - Devaty, R. P.

PY - 2001

Y1 - 2001

KW - Dislocation density

KW - GaN

KW - Molecular beam epitaxy

KW - Scanning tunneling microscopy

KW - SiC

UR - https://www.scopus.com/pages/publications/0035275624

UR - https://www.scopus.com/inward/citedby.url?scp=0035275624&partnerID=8YFLogxK

U2 - 10.1007/s11664-001-0010-6

DO - 10.1007/s11664-001-0010-6

M3 - Article

AN - SCOPUS:0035275624

SN - 0361-5235

VL - 30

SP - 162

EP - 169

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

M1 - 10

ER -

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

ASJC Scopus Subject Areas

Keywords

Access to Document

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