@article{4dc225da479d47739f29b9a9b301ce62,
title = "Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy",
keywords = "Dislocation density, GaN, Molecular beam epitaxy, Scanning tunneling microscopy, SiC",
author = "Lee, \{C. D.\} and V. Ramachandran and A. Sagar and Feenstra, \{R. M.\} and Greve, \{D. W.\} and Sarney, \{W. L.\} and L. Salamanca-Riba and Look, \{D. C.\} and Song Bai and Choyke, \{W. J.\} and Devaty, \{R. P.\}",
year = "2001",
doi = "10.1007/s11664-001-0010-6",
language = "English",
volume = "30",
pages = "162--169",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "3",
}