Properties of semi-insulating GaAs:Fe grown by hydride vapor phase epitaxy

E. Messmer Rodríguez; D. Söderström; P. Hult; S. Marcinkevicius; S. Lourdudoss; D. C. Look

doi:10.1149/1.1393865

Properties of semi-insulating GaAs:Fe grown by hydride vapor phase epitaxy

E. Messmer Rodríguez, D. Söderström, P. Hult, S. Marcinkevicius, S. Lourdudoss, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3109-3110
Number of pages	2
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	8
DOIs	https://doi.org/10.1149/1.1393865
State	Published - Aug 2000

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.1393865

Cite this

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title = "Properties of semi-insulating GaAs:Fe grown by hydride vapor phase epitaxy",

author = "\{Messmer Rodr{\'i}guez\}, E. and D. S{\"o}derstr{\"o}m and P. Hult and S. Marcinkevicius and S. Lourdudoss and Look, \{D. C.\}",

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doi = "10.1149/1.1393865",

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journal = "Journal of the Electrochemical Society",

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AU - Messmer Rodríguez, E.

AU - Söderström, D.

AU - Hult, P.

AU - Marcinkevicius, S.

AU - Lourdudoss, S.

AU - Look, D. C.

PY - 2000/8

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M3 - Article

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VL - 147

SP - 3109

EP - 3110

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Properties of semi-insulating GaAs:Fe grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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