Properties of two-dimensional silicon grown on graphene substrate

R. Zhou, L. C. Lew Yan Voon, Y. Zhuang

Research output: Contribution to journalArticlepeer-review

Abstract

The structure and electrical properties of two-dimensional (2D) sheets of silicon on a graphene substrate are studied using first-principles calculations. Two forms of corrugated silicon sheets are proposed to be energetically favorable structures. A shift of the Fermi energy level is found in both corrugated structures. Calculations of electron density show a weak coupling between the silicon layer and graphene substrate in both structures. The two forms of 2D silicon sheets turn out to be metallic and exhibit anisotropic transport properties.
Original languageEnglish
Article number093711
JournalJournal of Applied Physics
Volume114
Issue number9
DOIs
StatePublished - Sep 7 2013

ASJC Scopus Subject Areas

  • General Physics and Astronomy

Keywords

  • Density functional theory
  • Local density approximations
  • First-principle calculations
  • Crystal lattices
  • Superlattices
  • Transport properties
  • Electrical properties and parameters
  • Graphene
  • Chemical elements
  • Fermi-Dirac statistics

Disciplines

  • Electrical and Computer Engineering

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