Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

T. A. Growden; D. F. Storm; E. M. Cornuelle; L. M. Whitaker; B. P. Downey; W. D. Zhang; J. W. Daulton; R. Molnar; E. R. Brown; P. R. Berger; D. J. Meyer

doi:10.1109/DRC46940.2019.9046388

Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

T. A. Growden, D. F. Storm, E. M. Cornuelle, L. M. Whitaker, B. P. Downey, W. D. Zhang, J. W. Daulton, R. Molnar, E. R. Brown, P. R. Berger, D. J. Meyer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2019 Device Research Conference, DRC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	145-146
Number of pages	2
ISBN (Electronic)	9781728121123
DOIs	https://doi.org/10.1109/DRC46940.2019.9046388
State	Published - Jun 2019
Externally published	Yes
Event	2019 Device Research Conference, DRC 2019 - Ann Arbor, United States Duration: Jun 23 2019 → Jun 26 2019

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2019-June
ISSN (Print)	1548-3770

Conference

Conference	2019 Device Research Conference, DRC 2019
Country/Territory	United States
City	Ann Arbor
Period	6/23/19 → 6/26/19

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC46940.2019.9046388

Cite this

Growden, T. A., Storm, D. F., Cornuelle, E. M., Whitaker, L. M., Downey, B. P., Zhang, W. D., Daulton, J. W., Molnar, R., Brown, E. R., Berger, P. R., & Meyer, D. J. (2019). Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes. In 2019 Device Research Conference, DRC 2019 (pp. 145-146). Article 9046388 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046388

Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes. / Growden, T. A.; Storm, D. F.; Cornuelle, E. M. et al.
2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 145-146 9046388 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Growden, TA, Storm, DF, Cornuelle, EM, Whitaker, LM, Downey, BP, Zhang, WD, Daulton, JW, Molnar, R, Brown, ER, Berger, PR & Meyer, DJ 2019, Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes. in 2019 Device Research Conference, DRC 2019., 9046388, Device Research Conference - Conference Digest, DRC, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 145-146, 2019 Device Research Conference, DRC 2019, Ann Arbor, United States, 6/23/19. https://doi.org/10.1109/DRC46940.2019.9046388

Growden TA, Storm DF, Cornuelle EM, Whitaker LM, Downey BP, Zhang WD et al. Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes. In 2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 145-146. 9046388. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC46940.2019.9046388

@inproceedings{57c62b2af65a4f03948eac4530493d11,

title = "Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes",

author = "Growden, {T. A.} and Storm, {D. F.} and Cornuelle, {E. M.} and Whitaker, {L. M.} and Downey, {B. P.} and Zhang, {W. D.} and Daulton, {J. W.} and R. Molnar and Brown, {E. R.} and Berger, {P. R.} and Meyer, {D. J.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Device Research Conference, DRC 2019 ; Conference date: 23-06-2019 Through 26-06-2019",

year = "2019",

month = jun,

doi = "10.1109/DRC46940.2019.9046388",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "145--146",

booktitle = "2019 Device Research Conference, DRC 2019",

}

TY - GEN

T1 - Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

AU - Growden, T. A.

AU - Storm, D. F.

AU - Cornuelle, E. M.

AU - Whitaker, L. M.

AU - Downey, B. P.

AU - Zhang, W. D.

AU - Daulton, J. W.

AU - Molnar, R.

AU - Brown, E. R.

AU - Berger, P. R.

AU - Meyer, D. J.

PY - 2019/6

Y1 - 2019/6

UR - http://www.scopus.com/inward/record.url?scp=85083263784&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85083263784&partnerID=8YFLogxK

U2 - 10.1109/DRC46940.2019.9046388

DO - 10.1109/DRC46940.2019.9046388

M3 - Conference contribution

AN - SCOPUS:85083263784

T3 - Device Research Conference - Conference Digest, DRC

SP - 145

EP - 146

BT - 2019 Device Research Conference, DRC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Device Research Conference, DRC 2019

Y2 - 23 June 2019 through 26 June 2019

ER -

Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this