Radiative recombination and ultra-long exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation

Yongchun Zhong; Kam Sing Wong; Weili Zhang; D. C. Look

doi:10.1063/1.2729889

Radiative recombination and ultra-long exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation

Yongchun Zhong
, Kam Sing Wong
, Weili Zhang
, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	305-306
Number of pages	2
DOIs	https://doi.org/10.1063/1.2729889
State	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: Jul 24 2006 → Jul 28 2006

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	7/24/06 → 7/28/06

ASJC Scopus Subject Areas

General Physics and Astronomy

Keywords

Exciton
Time resolved
Ultrafast processes

Access to Document

10.1063/1.2729889

Cite this

Zhong, Y., Wong, K. S., Zhang, W., & Look, D. C. (2007). Radiative recombination and ultra-long exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 305-306). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2729889

Radiative recombination and ultra-long exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation. / Zhong, Yongchun; Wong, Kam Sing; Zhang, Weili et al.
Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 305-306 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhong, Y, Wong, KS, Zhang, W & Look, DC 2007, Radiative recombination and ultra-long exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 305-306, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 7/24/06. https://doi.org/10.1063/1.2729889

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title = "Radiative recombination and ultra-long exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation",

keywords = "Exciton, Time resolved, Ultrafast processes",

author = "Yongchun Zhong and Wong, \{Kam Sing\} and Weili Zhang and Look, \{D. C.\}",

year = "2007",

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booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",

note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

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AU - Look, D. C.

PY - 2007

Y1 - 2007

KW - Exciton

KW - Time resolved

KW - Ultrafast processes

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M3 - Conference contribution

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T3 - AIP Conference Proceedings

SP - 305

EP - 306

BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006

Y2 - 24 July 2006 through 28 July 2006

ER -

Radiative recombination and ultra-long exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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