Recovery of quenched hopping conduction in GaAs layers grown by molecular-beam epitaxy at 200 °c

D. C. Look, Z. Q. Fang, J. R. Sizelove

Research output: Contribution to journal › Article › peer-review

ASJC Scopus Subject Areas

@article{bdee4f53ea2e4943ae95504ed88eeace,

title = "Recovery of quenched hopping conduction in GaAs layers grown by molecular-beam epitaxy at 200 °c",

author = "Look, {D. C.} and Fang, {Z. Q.} and Sizelove, {J. R.}",

year = "1993",

doi = "10.1103/PhysRevB.47.1441",

language = "English",

volume = "47",

pages = "1441--1443",

journal = "Physical Review B",

issn = "0163-1829",

number = "3",

}

TY - JOUR

T1 - Recovery of quenched hopping conduction in GaAs layers grown by molecular-beam epitaxy at 200 °c

AU - Look, D. C.

AU - Fang, Z. Q.

AU - Sizelove, J. R.

PY - 1993

Y1 - 1993

UR - http://www.scopus.com/inward/record.url?scp=6244281789&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6244281789&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.47.1441

DO - 10.1103/PhysRevB.47.1441

M3 - Article

AN - SCOPUS:6244281789

SN - 0163-1829

VL - 47

SP - 1441

EP - 1443

JO - Physical Review B

JF - Physical Review B

IS - 3

ER -