Resonant Tunneling Through Mixed Quasibound States in a Triple-Well Structure

E. R. Brown; C. D. Parker; A. R. Calawa; M. J. Manfra

doi:10.1063/1.109175

Resonant Tunneling Through Mixed Quasibound States in a Triple-Well Structure

E. R. Brown, C. D. Parker, A. R. Calawa, M. J. Manfra

Research output: Contribution to journal › Article › peer-review

Abstract

A triple-well resonant-tunneling structure made from the In 0.53Ga0.47As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasibound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.

Original language	English
Pages (from-to)	3016-3018
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	23
DOIs	https://doi.org/10.1063/1.109175
State	Published - 1993
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.109175

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title = "Resonant Tunneling Through Mixed Quasibound States in a Triple-Well Structure",

abstract = "A triple-well resonant-tunneling structure made from the In 0.53Ga0.47As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasibound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.",

author = "Brown, \{E. R.\} and Parker, \{C. D.\} and Calawa, \{A. R.\} and Manfra, \{M. J.\}",

year = "1993",

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AU - Manfra, M. J.

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AB - A triple-well resonant-tunneling structure made from the In 0.53Ga0.47As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasibound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.

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Resonant Tunneling Through Mixed Quasibound States in a Triple-Well Structure

Abstract

ASJC Scopus Subject Areas

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