Self-Aligned Complementary GaAs MISFETs Using a Low-Temperature-Grown GaAs Gate Insulator

C. L. Chen; L. J. Mahoney; K. B. Nichols; E. R. Brown

doi:10.1049/el:19960221

Self-Aligned Complementary GaAs MISFETs Using a Low-Temperature-Grown GaAs Gate Insulator

C. L. Chen, L. J. Mahoney, K. B. Nichols, E. R. Brown

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs complementary metal insulator semiconductor field effect transistors (MISFETs) with a low temperature grown GaAs gate insulator were fabricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs. respectively. With a 1.5μm gate length, the maximum drain current is 40 and 120mA/mm for a normally-off n- and p-channel MISFET, respectively. It increases to 500mA/mm for a normally-on n-channel device.

Original language	English
Pages (from-to)	407-409
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	4
DOIs	https://doi.org/10.1049/el:19960221
State	Published - Feb 15 1996

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Keywords

Gallium arsenide
MISFET

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10.1049/el:19960221

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title = "Self-Aligned Complementary GaAs MISFETs Using a Low-Temperature-Grown GaAs Gate Insulator",

abstract = "GaAs complementary metal insulator semiconductor field effect transistors (MISFETs) with a low temperature grown GaAs gate insulator were fabricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs. respectively. With a 1.5μm gate length, the maximum drain current is 40 and 120mA/mm for a normally-off n- and p-channel MISFET, respectively. It increases to 500mA/mm for a normally-on n-channel device.",

keywords = "Gallium arsenide, MISFET",

author = "Chen, \{C. L.\} and Mahoney, \{L. J.\} and Nichols, \{K. B.\} and Brown, \{E. R.\}",

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AU - Chen, C. L.

AU - Mahoney, L. J.

AU - Nichols, K. B.

AU - Brown, E. R.

PY - 1996/2/15

Y1 - 1996/2/15

N2 - GaAs complementary metal insulator semiconductor field effect transistors (MISFETs) with a low temperature grown GaAs gate insulator were fabricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs. respectively. With a 1.5μm gate length, the maximum drain current is 40 and 120mA/mm for a normally-off n- and p-channel MISFET, respectively. It increases to 500mA/mm for a normally-on n-channel device.

AB - GaAs complementary metal insulator semiconductor field effect transistors (MISFETs) with a low temperature grown GaAs gate insulator were fabricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs. respectively. With a 1.5μm gate length, the maximum drain current is 40 and 120mA/mm for a normally-off n- and p-channel MISFET, respectively. It increases to 500mA/mm for a normally-on n-channel device.

KW - Gallium arsenide

KW - MISFET

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JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Self-Aligned Complementary GaAs MISFETs Using a Low-Temperature-Grown GaAs Gate Insulator

Abstract

ASJC Scopus Subject Areas

Keywords

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