Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

C. L. Chen; L. J. Mahoney; K. B. Nichols; E. R. Brown; B. F. Gramstorff

doi:10.1109/55.511592

Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

C. L. Chen, L. J. Mahoney, K. B. Nichols, E. R. Brown, B. F. Gramstorff

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	413-415
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	8
DOIs	https://doi.org/10.1109/55.511592
State	Published - 1996
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.511592

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title = "Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator",

author = "Chen, {C. L.} and Mahoney, {L. J.} and Nichols, {K. B.} and Brown, {E. R.} and Gramstorff, {B. F.}",

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volume = "17",

pages = "413--415",

journal = "IEEE Electron Device Letters",

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AU - Brown, E. R.

AU - Gramstorff, B. F.

PY - 1996

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EP - 415

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

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Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

ASJC Scopus Subject Areas

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