Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

C. L. Chen; L. J. Mahoney; K. B. Nichols; E. R. Brown; B. F. Gramstorff

doi:10.1109/55.511592

Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

C. L. Chen
, L. J. Mahoney
, K. B. Nichols
, E. R. Brown
, B. F. Gramstorff

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	413-415
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	8
DOIs	https://doi.org/10.1109/55.511592
State	Published - 1996
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.511592

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title = "Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator",

author = "Chen, \{C. L.\} and Mahoney, \{L. J.\} and Nichols, \{K. B.\} and Brown, \{E. R.\} and Gramstorff, \{B. F.\}",

year = "1996",

doi = "10.1109/55.511592",

language = "English",

volume = "17",

pages = "413--415",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "8",

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T1 - Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

AU - Chen, C. L.

AU - Mahoney, L. J.

AU - Nichols, K. B.

AU - Brown, E. R.

AU - Gramstorff, B. F.

PY - 1996

Y1 - 1996

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DO - 10.1109/55.511592

M3 - Article

AN - SCOPUS:0030213035

SN - 0741-3106

VL - 17

SP - 413

EP - 415

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

ASJC Scopus Subject Areas

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