Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

D. C. Look; K. D. Leedy; L. Vines; B. G. Svensson; A. Zubiaga; F. Tuomisto; D. R. Doutt; L. J. Brillson

doi:10.1103/PhysRevB.84.115202

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

D. C. Look, K. D. Leedy, L. Vines, B. G. Svensson, A. Zubiaga, F. Tuomisto, D. R. Doutt, L. J. Brillson

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	115202
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.84.115202
State	Published - Sep 12 2011

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.84.115202

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title = "Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO",

author = "Look, {D. C.} and Leedy, {K. D.} and L. Vines and Svensson, {B. G.} and A. Zubiaga and F. Tuomisto and Doutt, {D. R.} and Brillson, {L. J.}",

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T2 - The Zn vacancy in Ga-doped ZnO

AU - Look, D. C.

AU - Leedy, K. D.

AU - Vines, L.

AU - Svensson, B. G.

AU - Zubiaga, A.

AU - Tuomisto, F.

AU - Doutt, D. R.

AU - Brillson, L. J.

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Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

ASJC Scopus Subject Areas

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