Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

D. C. Look; Y. He; J. Ramdani; N. El-Masry; S. M. Bedair

doi:10.1063/1.109781

Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

D. C. Look, Y. He, J. Ramdani, N. El-Masry, S. M. Bedair

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1231-1233
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	9
DOIs	https://doi.org/10.1063/1.109781
State	Published - 1993

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.109781

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title = "Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures",

author = "Look, {D. C.} and Y. He and J. Ramdani and N. El-Masry and Bedair, {S. M.}",

year = "1993",

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pages = "1231--1233",

journal = "Applied Physics Letters",

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AU - Look, D. C.

AU - He, Y.

AU - Ramdani, J.

AU - El-Masry, N.

AU - Bedair, S. M.

PY - 1993

Y1 - 1993

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SP - 1231

EP - 1233

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

ASJC Scopus Subject Areas

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