Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β -Ga2O3 films by pulsed laser deposition

Kevin D. Leedy; Kelson D. Chabak; Vladimir Vasilyev; David C. Look; Krishnamurthy Mahalingam; Jeff L. Brown; Andrew J. Green; Cynthia T. Bowers; Antonio Crespo; Darren B. Thomson; Gregg H. Jessen

doi:10.1063/1.5047214

Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β -Ga₂O₃ films by pulsed laser deposition

Kevin D. Leedy, Kelson D. Chabak, Vladimir Vasilyev, David C. Look, Krishnamurthy Mahalingam, Jeff L. Brown, Andrew J. Green, Cynthia T. Bowers, Antonio Crespo, Darren B. Thomson, Gregg H. Jessen

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	101102
Journal	APL Materials
Volume	6
Issue number	10
DOIs	https://doi.org/10.1063/1.5047214
State	Published - Oct 1 2018

ASJC Scopus Subject Areas

General Materials Science
General Engineering

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10.1063/1.5047214

Cite this

@article{d8c0a1cc10964cd5bc40d02cf95fab72,

title = "Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β -Ga2O3 films by pulsed laser deposition",

author = "Leedy, {Kevin D.} and Chabak, {Kelson D.} and Vladimir Vasilyev and Look, {David C.} and Krishnamurthy Mahalingam and Brown, {Jeff L.} and Green, {Andrew J.} and Bowers, {Cynthia T.} and Antonio Crespo and Thomson, {Darren B.} and Jessen, {Gregg H.}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

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doi = "10.1063/1.5047214",

language = "English",

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journal = "APL Materials",

issn = "2166-532X",

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TY - JOUR

T1 - Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β -Ga2O3 films by pulsed laser deposition

AU - Leedy, Kevin D.

AU - Chabak, Kelson D.

AU - Vasilyev, Vladimir

AU - Look, David C.

AU - Mahalingam, Krishnamurthy

AU - Brown, Jeff L.

AU - Green, Andrew J.

AU - Bowers, Cynthia T.

AU - Crespo, Antonio

AU - Thomson, Darren B.

AU - Jessen, Gregg H.

PY - 2018/10/1

Y1 - 2018/10/1

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U2 - 10.1063/1.5047214

DO - 10.1063/1.5047214

M3 - Article

AN - SCOPUS:85054391306

SN - 2166-532X

VL - 6

JO - APL Materials

JF - APL Materials

IS - 10

M1 - 101102

ER -

Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β -Ga2O3 films by pulsed laser deposition

ASJC Scopus Subject Areas

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Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β -Ga₂O₃ films by pulsed laser deposition