Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy

Jeonghyun Hwang; William J. Schaff; Lester F. Eastman; Shawn T. Bradley; Leonard J. Brillson; David C. Look; J. Wu; Wladek Walukiewicz; Madalina Furis; Alexander N. Cartwright

doi:10.1063/1.1534395

Si doping of high-Al-mole fraction Al_xGa_1-xN alloys with rf plasma-induced molecular-beam-epitaxy

Jeonghyun Hwang, William J. Schaff, Lester F. Eastman, Shawn T. Bradley, Leonard J. Brillson, David C. Look, J. Wu, Wladek Walukiewicz, Madalina Furis, Alexander N. Cartwright

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	5192-5194
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	27
DOIs	https://doi.org/10.1063/1.1534395
State	Published - Dec 30 2002

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1534395

Cite this

@article{3e6ad160ce1748c1b82fa7541930b5a5,

title = "Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy",

author = "Jeonghyun Hwang and Schaff, {William J.} and Eastman, {Lester F.} and Bradley, {Shawn T.} and Brillson, {Leonard J.} and Look, {David C.} and J. Wu and Wladek Walukiewicz and Madalina Furis and Cartwright, {Alexander N.}",

year = "2002",

month = dec,

day = "30",

doi = "10.1063/1.1534395",

language = "English",

volume = "81",

pages = "5192--5194",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "27",

}

TY - JOUR

T1 - Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy

AU - Hwang, Jeonghyun

AU - Schaff, William J.

AU - Eastman, Lester F.

AU - Bradley, Shawn T.

AU - Brillson, Leonard J.

AU - Look, David C.

AU - Wu, J.

AU - Walukiewicz, Wladek

AU - Furis, Madalina

AU - Cartwright, Alexander N.

PY - 2002/12/30

Y1 - 2002/12/30

UR - http://www.scopus.com/inward/record.url?scp=0347296279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347296279&partnerID=8YFLogxK

U2 - 10.1063/1.1534395

DO - 10.1063/1.1534395

M3 - Article

AN - SCOPUS:0347296279

SN - 0003-6951

VL - 81

SP - 5192

EP - 5194

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this

Si doping of high-Al-mole fraction Al_xGa_1-xN alloys with rf plasma-induced molecular-beam-epitaxy