TY - JOUR
T1 - Significant mobility enhancement in extremely thin highly doped ZnO films
AU - Look, David C.
AU - Heller, Eric R.
AU - Yao, Yu Feng
AU - Yang, C. C.
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
PY - 2015/4/13
Y1 - 2015/4/13
N2 - Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μH of 64.1, 43.4, 37.0, and 34.2 cm2/V-s, respectively. This extremely unusual ordering of μH vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm2/V-s at the interface (z = d), falling to 58 cm2/V-s at z = d + 2 nm. Excellent fits to μH vs d and sheet concentration ns vs d are obtained with no adjustable parameters.
AB - Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μH of 64.1, 43.4, 37.0, and 34.2 cm2/V-s, respectively. This extremely unusual ordering of μH vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm2/V-s at the interface (z = d), falling to 58 cm2/V-s at z = d + 2 nm. Excellent fits to μH vs d and sheet concentration ns vs d are obtained with no adjustable parameters.
UR - https://www.scopus.com/pages/publications/84927726786
UR - https://www.scopus.com/inward/citedby.url?scp=84927726786&partnerID=8YFLogxK
U2 - 10.1063/1.4917561
DO - 10.1063/1.4917561
M3 - Article
AN - SCOPUS:84927726786
SN - 0003-6951
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 15
M1 - 152102
ER -