Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

D. C. Reynolds; D. C. Look; B. Jogai; H. Morkoç

doi:10.1016/S0038-1098(96)00697-7

Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

D. C. Reynolds, D. C. Look, B. Jogai, H. Morkoç

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	643-646
Number of pages	4
Journal	Solid State Communications
Volume	101
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1098(96)00697-7
State	Published - Mar 1997

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(96)00697-7

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title = "Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN",

author = "Reynolds, {D. C.} and Look, {D. C.} and B. Jogai and H. Morko{\c c}",

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AU - Reynolds, D. C.

AU - Look, D. C.

AU - Jogai, B.

AU - Morkoç, H.

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VL - 101

SP - 643

EP - 646

JO - Solid State Communications

JF - Solid State Communications

IS - 9

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Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

ASJC Scopus Subject Areas

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