Simple ohmic contact formation in HEMT structures: Application to AlGaN/GaN

Clarissa D. Vazquez-Colon, David C. Look, Eric Heller, John S. Cetnar, Arturo A. Ayon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices XIV
EditorsHiroshi Fujioka, Ulrich T. Schwarz, Hadis Morkoc
PublisherSPIE
ISBN (Electronic)9781510624788
DOIs
StatePublished - 2019
EventGallium Nitride Materials and Devices XIV 2019 - San Francisco, United States
Duration: Feb 4 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10918
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices XIV 2019
Country/TerritoryUnited States
CitySan Francisco
Period2/4/192/7/19

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • AlGaN/GaN
  • HEMT
  • Ohmic contacts
  • Tunneling

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