Abstract
A nonlinear drift-diffusion model for semiconductors is analyzed to show the existence of non-vacuum global solutions and stationary solutions. The long time behavior of the solutions is studied by establishing the existence of an absorbing set and a compact attractor of the dynamical system. Parallel results on vacuum solutions are also obtained under weaker conditions on model parameters.
Original language | American English |
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Journal | Electronic Journal of Differential Equations |
Volume | 1999 |
DOIs | |
State | Published - May 10 1999 |
Keywords
- Drift-diffusion model
- attractors
- degenerated parabolic and elliptic equations
- nonlinear diffusion
- semiconductors