State-of-the-art in 1.55 νm ultrafast InGaAs photoconductors, and the use of signal-processing techniques to extract the photocarrier lifetime

E. R. Brown; D. C. Driscoll; A. C. Gossard

doi:10.1088/0268-1242/20/7/009

State-of-the-art in 1.55 νm ultrafast InGaAs photoconductors, and the use of signal-processing techniques to extract the photocarrier lifetime

E. R. Brown, D. C. Driscoll, A. C. Gossard

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	S199-S204
Journal	Semiconductor Science and Technology
Volume	20
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/20/7/009
State	Published - Jul 1 2005
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/20/7/009

Cite this

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AU - Driscoll, D. C.

AU - Gossard, A. C.

PY - 2005/7/1

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State-of-the-art in 1.55 νm ultrafast InGaAs photoconductors, and the use of signal-processing techniques to extract the photocarrier lifetime

ASJC Scopus Subject Areas

Access to Document

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