Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high-resolution x-ray diffraction and grazing incidence diffraction

Yan Zhuang, V. Holý, J. Stangl, Anton A. Darhuber, P. Mikulik, S. Zerlauth, F. Schäffler, G. Bauer, N. Darowski, D. Lübbert, U. Pietsch

Research output: Contribution to journalArticlepeer-review

Abstract

Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.
Original languageAmerican English
Pages (from-to)215-221
JournalJournal of Physics D: Applied Physics
Volume32
DOIs
StatePublished - 1999
Externally publishedYes

Keywords

  • Quantum wires
  • X-ray diffraction
  • Grazing incidence diffraction

Disciplines

  • Electrical and Computer Engineering

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