Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy

D. C. Reynolds; D. C. Look; B. Jogai; J. E. Hoelscher; R. E. Sherriff; R. J. Molnar

doi:10.1063/1.373839

Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy

D. C. Reynolds, D. C. Look, B. Jogai, J. E. Hoelscher, R. E. Sherriff, R. J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1460-1463
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	3
DOIs	https://doi.org/10.1063/1.373839
State	Published - Aug 2000

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.373839

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title = "Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy",

author = "Reynolds, {D. C.} and Look, {D. C.} and B. Jogai and Hoelscher, {J. E.} and Sherriff, {R. E.} and Molnar, {R. J.}",

year = "2000",

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doi = "10.1063/1.373839",

language = "English",

volume = "88",

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journal = "Journal of Applied Physics",

issn = "0021-8979",

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AU - Reynolds, D. C.

AU - Look, D. C.

AU - Jogai, B.

AU - Hoelscher, J. E.

AU - Sherriff, R. E.

AU - Molnar, R. J.

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SP - 1460

EP - 1463

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy

ASJC Scopus Subject Areas

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