| Original language | English |
|---|---|
| Pages (from-to) | 1460-1463 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 88 |
| Issue number | 3 |
| DOIs | |
| State | Published - Aug 2000 |
ASJC Scopus Subject Areas
- General Physics and Astronomy
Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy
- D. C. Reynolds
- , D. C. Look
- , B. Jogai
- , J. E. Hoelscher
- , R. E. Sherriff
- , R. J. Molnar
Research output: Contribution to journal › Article › peer-review