Strong Sub-Bandgap Absorption in GaSb/ErSb Nanocomposites Attributed to Plasma Resonances of Semimetallic ErSb Nanoparticles

M. P. Hanson, D. C. Driscoll, E. R. Brown, A. C. Gossard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report experimental evidence for strong surface plasma resonances on semimetallic ErSb nanoparticles grown epitaxially in semiconducting GaSb by molecular beam epitaxy. The infrared transmission spectra of ErSb/GaSb superlattices grown by molecular beam epitaxy showed a pronounced attenuation peak below the band gap of GaSb, not observed in a GaSb epitaxial control layer containing no ErSb. We attribute the attenuation peak to a surface plasmon resonance on the ErSb particles. The position of this peak shifts to longer wavelengths with increased ErSb deposition, from 2.4 μm for the smallest deposition to 3.8 μm for the largest deposition. In addition, the attenuation strength increases with the total amount of ErSb contained in the sample. The strongest effective attenuation coefficient was measured to be 1.4×10 4 cm -1, which is nearly equal to the cross bandgap absorption of the bulk GaSb at 1 μm.
Original languageEnglish
Title of host publicationPhysics of Semiconductors
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages845-846
Number of pages2
DOIs
StatePublished - Jun 30 2005
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus Subject Areas

  • General Physics and Astronomy

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