Abstract
Pseudomorphic ZnSe/AlAs(001) heterostructures were fabricated by molecular beam epitaxy on GaAs wafers. Intrinsic stacking faults on {111} planes originating at the II-VI/III-V interface and propagating throughout the II-VI overlayer were the main type of native defects observed. The interface termination was varied by adsorption of Zn or Se onto the AlAs(001)3×1 surface prior to ZnSe growth. The resulting large changes in interface composition and band discontinuities mirror those obtained by employing Zn- or Se-rich growth conditions in the early stages of heterojunction fabrication. Band offsets calculated from first principles for ZnSe/GaAs, when rescaled by the different magnitude of the electrostatic interface dipole, yield a range of predictions in good agreement with experiment for ZnSe/AlAs.
Original language | American English |
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Article number | 155312 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 63 |
DOIs | |
State | Published - Mar 29 2001 |
Externally published | Yes |
Keywords
- ZnSe
Disciplines
- Electrical and Computer Engineering