Structural and electronic properties of ZnSe/AlAs heterostructures

S. Rubini; E. Milocco; L. Sorba; E. Pelucchi; A. Franciosi; A. Garulli; A. Parisini; Yan Zhuang; G. Bauer

doi:10.1103/PhysRevB.63.155312

Structural and electronic properties of ZnSe/AlAs heterostructures

S. Rubini
, E. Milocco
, L. Sorba
, E. Pelucchi
, A. Franciosi
, A. Garulli
, A. Parisini
, Yan Zhuang
, G. Bauer

Research output: Contribution to journal › Article › peer-review

Abstract

Pseudomorphic ZnSe/AlAs(001) heterostructures were fabricated by molecular beam epitaxy on GaAs wafers. Intrinsic stacking faults on {111} planes originating at the II-VI/III-V interface and propagating throughout the II-VI overlayer were the main type of native defects observed. The interface termination was varied by adsorption of Zn or Se onto the AlAs⁡(001)⁢3×1 surface prior to ZnSe growth. The resulting large changes in interface composition and band discontinuities mirror those obtained by employing Zn- or Se-rich growth conditions in the early stages of heterojunction fabrication. Band offsets calculated from first principles for ZnSe/GaAs, when rescaled by the different magnitude of the electrostatic interface dipole, yield a range of predictions in good agreement with experiment for ZnSe/AlAs.

Original language	American English
Article number	155312
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
DOIs	https://doi.org/10.1103/PhysRevB.63.155312
State	Published - Mar 29 2001
Externally published	Yes

Keywords

ZnSe

Disciplines

Electrical and Computer Engineering

Access to Document

10.1103/PhysRevB.63.155312

Cite this

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title = "Structural and electronic properties of ZnSe/AlAs heterostructures",

abstract = "Pseudomorphic ZnSe/AlAs(001) heterostructures were fabricated by molecular beam epitaxy on GaAs wafers. Intrinsic stacking faults on \{111\} planes originating at the II-VI/III-V interface and propagating throughout the II-VI overlayer were the main type of native defects observed. The interface termination was varied by adsorption of Zn or Se onto the AlAs⁡(001)⁢3×1 surface prior to ZnSe growth. The resulting large changes in interface composition and band discontinuities mirror those obtained by employing Zn- or Se-rich growth conditions in the early stages of heterojunction fabrication. Band offsets calculated from first principles for ZnSe/GaAs, when rescaled by the different magnitude of the electrostatic interface dipole, yield a range of predictions in good agreement with experiment for ZnSe/AlAs.",

keywords = "ZnSe",

author = "S. Rubini and E. Milocco and L. Sorba and E. Pelucchi and A. Franciosi and A. Garulli and A. Parisini and Yan Zhuang and G. Bauer",

year = "2001",

month = mar,

day = "29",

doi = "10.1103/PhysRevB.63.155312",

language = "American English",

volume = "63",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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TY - JOUR

T1 - Structural and electronic properties of ZnSe/AlAs heterostructures

AU - Rubini, S.

AU - Milocco, E.

AU - Sorba, L.

AU - Pelucchi, E.

AU - Franciosi, A.

AU - Garulli, A.

AU - Parisini, A.

AU - Zhuang, Yan

AU - Bauer, G.

PY - 2001/3/29

Y1 - 2001/3/29

N2 - Pseudomorphic ZnSe/AlAs(001) heterostructures were fabricated by molecular beam epitaxy on GaAs wafers. Intrinsic stacking faults on {111} planes originating at the II-VI/III-V interface and propagating throughout the II-VI overlayer were the main type of native defects observed. The interface termination was varied by adsorption of Zn or Se onto the AlAs⁡(001)⁢3×1 surface prior to ZnSe growth. The resulting large changes in interface composition and band discontinuities mirror those obtained by employing Zn- or Se-rich growth conditions in the early stages of heterojunction fabrication. Band offsets calculated from first principles for ZnSe/GaAs, when rescaled by the different magnitude of the electrostatic interface dipole, yield a range of predictions in good agreement with experiment for ZnSe/AlAs.

AB - Pseudomorphic ZnSe/AlAs(001) heterostructures were fabricated by molecular beam epitaxy on GaAs wafers. Intrinsic stacking faults on {111} planes originating at the II-VI/III-V interface and propagating throughout the II-VI overlayer were the main type of native defects observed. The interface termination was varied by adsorption of Zn or Se onto the AlAs⁡(001)⁢3×1 surface prior to ZnSe growth. The resulting large changes in interface composition and band discontinuities mirror those obtained by employing Zn- or Se-rich growth conditions in the early stages of heterojunction fabrication. Band offsets calculated from first principles for ZnSe/GaAs, when rescaled by the different magnitude of the electrostatic interface dipole, yield a range of predictions in good agreement with experiment for ZnSe/AlAs.

KW - ZnSe

U2 - 10.1103/PhysRevB.63.155312

DO - 10.1103/PhysRevB.63.155312

M3 - Article

SN - 1098-0121

VL - 63

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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