Structural and optical properties of Si/Si1-xGex wires

Yan Zhuang; C. Schelling; J. Stangl; C. Penn; S. Senz; F. Schäffler; T. Roch; A. Daniel; J. Grenzer; U. Pietsch; G. Bauer

doi:10.1016/S0040-6090(00)00902-0

Structural and optical properties of Si/Si_1-xGe_x wires

Yan Zhuang, C. Schelling, J. Stangl, C. Penn, S. Senz, F. Schäffler, T. Roch, A. Daniel, J. Grenzer, U. Pietsch, G. Bauer

Research output: Contribution to journal › Article › peer-review

Abstract

Si/Si_1−xGe_x wires were grown by local solid source molecular beam epitaxy using three kinds of masks: Si, SiO2 and SiO2/Si3N4. Their structural properties were studied by transmission electron microscopy to obtain information on the shape of cross sections, and by high resolution X-ray coplanar diffraction, which yielded the average vertical and in-plane strain. Grazing incidence diffraction was used to measure the depth-dependent in-plane strain distribution in the wires as well as in the substrate, which is compared to results of finite element calculations. Low temperature photoluminescence measurements were performed to investigate the optical properties of the wires.

Original language	American English
Pages (from-to)	409-413
Journal	Thin Solid Films
Volume	369
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)00902-0
State	Published - Jul 3 2000
Externally published	Yes

Keywords

Si-based nanostructures
Molecular beam epitaxy
X-ray diffraction
Photoluminescence
Transmission electron microscopy

Disciplines

Electrical and Computer Engineering

Access to Document

10.1016/S0040-6090(00)00902-0

Cite this

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title = "Structural and optical properties of Si/Si1-xGex wires",

abstract = "Si/Si1−xGex wires were grown by local solid source molecular beam epitaxy using three kinds of masks: Si, SiO2 and SiO2/Si3N4. Their structural properties were studied by transmission electron microscopy to obtain information on the shape of cross sections, and by high resolution X-ray coplanar diffraction, which yielded the average vertical and in-plane strain. Grazing incidence diffraction was used to measure the depth-dependent in-plane strain distribution in the wires as well as in the substrate, which is compared to results of finite element calculations. Low temperature photoluminescence measurements were performed to investigate the optical properties of the wires.",

keywords = "Si-based nanostructures, Molecular beam epitaxy, X-ray diffraction, Photoluminescence, Transmission electron microscopy",

author = "Yan Zhuang and C. Schelling and J. Stangl and C. Penn and S. Senz and F. Sch{\"a}ffler and T. Roch and A. Daniel and J. Grenzer and U. Pietsch and G. Bauer",

year = "2000",

month = jul,

day = "3",

doi = "10.1016/S0040-6090(00)00902-0",

language = "American English",

volume = "369",

pages = "409--413",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

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TY - JOUR

T1 - Structural and optical properties of Si/Si1-xGex wires

AU - Zhuang, Yan

AU - Schelling, C.

AU - Stangl, J.

AU - Penn, C.

AU - Senz, S.

AU - Schäffler, F.

AU - Roch, T.

AU - Daniel, A.

AU - Grenzer, J.

AU - Pietsch, U.

AU - Bauer, G.

PY - 2000/7/3

Y1 - 2000/7/3

N2 - Si/Si1−xGex wires were grown by local solid source molecular beam epitaxy using three kinds of masks: Si, SiO2 and SiO2/Si3N4. Their structural properties were studied by transmission electron microscopy to obtain information on the shape of cross sections, and by high resolution X-ray coplanar diffraction, which yielded the average vertical and in-plane strain. Grazing incidence diffraction was used to measure the depth-dependent in-plane strain distribution in the wires as well as in the substrate, which is compared to results of finite element calculations. Low temperature photoluminescence measurements were performed to investigate the optical properties of the wires.

AB - Si/Si1−xGex wires were grown by local solid source molecular beam epitaxy using three kinds of masks: Si, SiO2 and SiO2/Si3N4. Their structural properties were studied by transmission electron microscopy to obtain information on the shape of cross sections, and by high resolution X-ray coplanar diffraction, which yielded the average vertical and in-plane strain. Grazing incidence diffraction was used to measure the depth-dependent in-plane strain distribution in the wires as well as in the substrate, which is compared to results of finite element calculations. Low temperature photoluminescence measurements were performed to investigate the optical properties of the wires.

KW - Si-based nanostructures

KW - Molecular beam epitaxy

KW - X-ray diffraction

KW - Photoluminescence

KW - Transmission electron microscopy

U2 - 10.1016/S0040-6090(00)00902-0

DO - 10.1016/S0040-6090(00)00902-0

M3 - Article

SN - 0040-6090

VL - 369

SP - 409

EP - 413

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -