Abstract
An (AlAs/GaAs/AlAs/AlGaAs)/GaAs(001) double‐barrier superlattice grown by molecular beam epitaxy (MBE) is studied by combining synchrotron radiation and double‐crystal x‐ray diffraction (DCD). The intensity of satellite peaks is modulated by the wave function of each sublayer in one superlattice period. Simulated by the x‐ray dynamical diffraction theory, it is discovered that the intensity of the satellite peaks situated near the modulating wave node point of each sublayer is very sensitive to the variation of the layer structural parameters. The accurate layer thickness of each sublayer is obtained with an error less than 1 Å. Furthermore, x‐ray kinematical diffraction theory is used to explain the modulation phenomenon.
Original language | American English |
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Pages (from-to) | 1147–1149 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 8 |
DOIs | |
State | Published - Feb 19 1996 |
Externally published | Yes |
Keywords
- Superlattices
- Synchrotron radiation
- X-ray diffraction
Disciplines
- Electrical and Computer Engineering