Suppressed Gate Current in a Superlattice-Insulated-Gate Field-Effect Transistor on InP

E. R. Brown; C. L. Chen; L. J. Mahoney; P. A. Maki; K. B. Nichols

doi:10.1063/1.113980

Suppressed Gate Current in a Superlattice-Insulated-Gate Field-Effect Transistor on InP

E. R. Brown, C. L. Chen, L. J. Mahoney, P. A. Maki, K. B. Nichols

Research output: Contribution to journal › Article › peer-review

Abstract

A new insulating layer is used in a normally-off (i.e., enhancement-mode) field-effect transistor on an InP substrate. It consists of closely spaced, strained AlAs barriers embedded in In0.52Al0.48As between the In0.53Al0.47As channel and the metal gate. This insulating layer increases the forward-bias gate turn-on voltage by approximately 50% and reduces the gate leakage current by as much as 50 times compared to a conventional In0.52Al0.48As insulating layer. In addition, the transistor characteristics are significantly improved such that the maximum current is increased approximately three times and the peak transconductance is increased by 70%. These properties are explained by superior confinement of electrons to the channel in the presence of the AlAs barriers.

Original language	English
Pages (from-to)	2352
Number of pages	1
Journal	Applied Physics Letters
Volume	66
Issue number	18
DOIs	https://doi.org/10.1063/1.113980
State	Published - 1995
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Suppressed Gate Current in a Superlattice-Insulated-Gate Field-Effect Transistor on InP",

abstract = "A new insulating layer is used in a normally-off (i.e., enhancement-mode) field-effect transistor on an InP substrate. It consists of closely spaced, strained AlAs barriers embedded in In0.52Al0.48As between the In0.53Al0.47As channel and the metal gate. This insulating layer increases the forward-bias gate turn-on voltage by approximately 50\% and reduces the gate leakage current by as much as 50 times compared to a conventional In0.52Al0.48As insulating layer. In addition, the transistor characteristics are significantly improved such that the maximum current is increased approximately three times and the peak transconductance is increased by 70\%. These properties are explained by superior confinement of electrons to the channel in the presence of the AlAs barriers.",

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AU - Brown, E. R.

AU - Chen, C. L.

AU - Mahoney, L. J.

AU - Maki, P. A.

AU - Nichols, K. B.

PY - 1995

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AB - A new insulating layer is used in a normally-off (i.e., enhancement-mode) field-effect transistor on an InP substrate. It consists of closely spaced, strained AlAs barriers embedded in In0.52Al0.48As between the In0.53Al0.47As channel and the metal gate. This insulating layer increases the forward-bias gate turn-on voltage by approximately 50% and reduces the gate leakage current by as much as 50 times compared to a conventional In0.52Al0.48As insulating layer. In addition, the transistor characteristics are significantly improved such that the maximum current is increased approximately three times and the peak transconductance is increased by 70%. These properties are explained by superior confinement of electrons to the channel in the presence of the AlAs barriers.

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Suppressed Gate Current in a Superlattice-Insulated-Gate Field-Effect Transistor on InP

Abstract

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