Surface and bulk exciton recombination dynamics in GaN freestanding films via one- and two-photon excitations

Yongchun Zhong; Kam Sing Wong; Weili Zhang; D. C. Look

doi:10.1007/s10854-007-9253-1

Surface and bulk exciton recombination dynamics in GaN freestanding films via one- and two-photon excitations

Yongchun Zhong, Kam Sing Wong, Weili Zhang, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	453-457
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-007-9253-1
State	Published - Oct 2007

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-007-9253-1

Cite this

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title = "Surface and bulk exciton recombination dynamics in GaN freestanding films via one- and two-photon excitations",

author = "Yongchun Zhong and Wong, {Kam Sing} and Weili Zhang and Look, {D. C.}",

year = "2007",

month = oct,

doi = "10.1007/s10854-007-9253-1",

language = "English",

volume = "18",

pages = "453--457",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "SUPPL. 1",

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TY - JOUR

T1 - Surface and bulk exciton recombination dynamics in GaN freestanding films via one- and two-photon excitations

AU - Zhong, Yongchun

AU - Wong, Kam Sing

AU - Zhang, Weili

AU - Look, D. C.

PY - 2007/10

Y1 - 2007/10

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U2 - 10.1007/s10854-007-9253-1

DO - 10.1007/s10854-007-9253-1

M3 - Article

AN - SCOPUS:34547586730

SN - 0957-4522

VL - 18

SP - 453

EP - 457

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - SUPPL. 1

ER -

Surface and bulk exciton recombination dynamics in GaN freestanding films via one- and two-photon excitations

ASJC Scopus Subject Areas

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