Surface and interface free-carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge

D. C. Look; C. E. Stutz; K. R. Evans

doi:10.1063/1.102731

Surface and interface free-carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge

D. C. Look, C. E. Stutz, K. R. Evans

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	668-670
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	7
DOIs	https://doi.org/10.1063/1.102731
State	Published - 1990

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.102731

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title = "Surface and interface free-carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge",

author = "Look, {D. C.} and Stutz, {C. E.} and Evans, {K. R.}",

year = "1990",

doi = "10.1063/1.102731",

language = "English",

volume = "56",

pages = "668--670",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Surface and interface free-carrier depletion in GaAs molecular beam epitaxial layers

T2 - Demonstration of high interface charge

AU - Look, D. C.

AU - Stutz, C. E.

AU - Evans, K. R.

PY - 1990

Y1 - 1990

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EP - 670

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Surface and interface free-carrier depletion in GaAs molecular beam epitaxial layers: Demonstration of high interface charge

ASJC Scopus Subject Areas

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