The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm

J. R. Middendorf; E. R. Brown

doi:10.1109/IRMMW-THz.2013.6665589

The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm

J. R. Middendorf, E. R. Brown

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
DOIs	https://doi.org/10.1109/IRMMW-THz.2013.6665589
State	Published - 2013
Externally published	Yes
Event	2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 - Mainz, Germany Duration: Sep 1 2013 → Sep 6 2013

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
Country/Territory	Germany
City	Mainz
Period	9/1/13 → 9/6/13

ASJC Scopus Subject Areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/IRMMW-THz.2013.6665589

Cite this

Middendorf, J. R., & Brown, E. R. (2013). The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm. In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 Article 6665589 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). https://doi.org/10.1109/IRMMW-THz.2013.6665589

The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm. / Middendorf, J. R.; Brown, E. R.
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013. 2013. 6665589 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Middendorf, JR & Brown, ER 2013, The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm. in 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013., 6665589, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013, Mainz, Germany, 9/1/13. https://doi.org/10.1109/IRMMW-THz.2013.6665589

Middendorf JR, Brown ER. The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm. In 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013. 2013. 6665589. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz.2013.6665589

@inproceedings{8e5c32ea65c54859adedc383117798a0,

title = "The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm",

author = "Middendorf, \{J. R.\} and Brown, \{E. R.\}",

year = "2013",

doi = "10.1109/IRMMW-THz.2013.6665589",

language = "English",

isbn = "9781467347174",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

booktitle = "2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013",

note = "2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 ; Conference date: 01-09-2013 Through 06-09-2013",

}

TY - GEN

T1 - The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm

AU - Middendorf, J. R.

AU - Brown, E. R.

PY - 2013

Y1 - 2013

UR - https://www.scopus.com/pages/publications/84893356653

UR - https://www.scopus.com/inward/citedby.url?scp=84893356653&partnerID=8YFLogxK

U2 - 10.1109/IRMMW-THz.2013.6665589

DO - 10.1109/IRMMW-THz.2013.6665589

M3 - Conference contribution

AN - SCOPUS:84893356653

SN - 9781467347174

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

BT - 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013

T2 - 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013

Y2 - 1 September 2013 through 6 September 2013

ER -

The effect of Er fraction on THz power generated by extrinsic- photoconductive ErAs:GaAs switches driven at 1550 nm

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this