The Monolithic Optoelectronic Transistor: A New Optical Neuron Device

B. F. Aull; E. R. Brown; P. A. Maki; K. B. Nichols; S. C. Palmateer; T. A. Lind

doi:10.1117/12.163588

The Monolithic Optoelectronic Transistor: A New Optical Neuron Device

B. F. Aull, E. R. Brown, P. A. Maki, K. B. Nichols, S. C. Palmateer, T. A. Lind

Research output: Contribution to journal › Conference article › peer-review

Abstract

An integrated optoelectronic device, the monolithic optoelectronic transistor (MOET), has been demonstrated. The MOET functions as an optical sum-and-threshold device with large-signal optical gain. It can be electrically biased to achieve either abrupt switching thresholds or quasisigmoidal optical transfer characteristics, and excitatory and inhibitory inputs can be incorporated through a simple modification of the single-input device. Initial MOET devices displayed an optical gain greater than 10 and an output contrast ratio exceeding 50. The MOET has promising characteristics as a building block of optoelectronically implemented neural networks and image preprocessing systems.

Original language	English
Pages (from-to)	388-393
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2026
DOIs	https://doi.org/10.1117/12.163588
State	Published - Nov 9 1993
Externally published	Yes
Event	Photonics for Processors, Neural Networks, and Memories 1993 - San Diego, United States Duration: Jul 11 1993 → Jul 16 1993

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.163588

Cite this

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title = "The Monolithic Optoelectronic Transistor: A New Optical Neuron Device",

abstract = "An integrated optoelectronic device, the monolithic optoelectronic transistor (MOET), has been demonstrated. The MOET functions as an optical sum-and-threshold device with large-signal optical gain. It can be electrically biased to achieve either abrupt switching thresholds or quasisigmoidal optical transfer characteristics, and excitatory and inhibitory inputs can be incorporated through a simple modification of the single-input device. Initial MOET devices displayed an optical gain greater than 10 and an output contrast ratio exceeding 50. The MOET has promising characteristics as a building block of optoelectronically implemented neural networks and image preprocessing systems.",

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AU - Aull, B. F.

AU - Brown, E. R.

AU - Maki, P. A.

AU - Nichols, K. B.

AU - Palmateer, S. C.

AU - Lind, T. A.

PY - 1993/11/9

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AB - An integrated optoelectronic device, the monolithic optoelectronic transistor (MOET), has been demonstrated. The MOET functions as an optical sum-and-threshold device with large-signal optical gain. It can be electrically biased to achieve either abrupt switching thresholds or quasisigmoidal optical transfer characteristics, and excitatory and inhibitory inputs can be incorporated through a simple modification of the single-input device. Initial MOET devices displayed an optical gain greater than 10 and an output contrast ratio exceeding 50. The MOET has promising characteristics as a building block of optoelectronically implemented neural networks and image preprocessing systems.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

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The Monolithic Optoelectronic Transistor: A New Optical Neuron Device

Abstract

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