Theoretical and experimental capacitance-voltage behavior of Al 0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy

George B. Norris; D. C. Look; W. Kopp; J. Klem; H. Morkoç

doi:10.1063/1.96132

Theoretical and experimental capacitance-voltage behavior of Al _0.3Ga_0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy

George B. Norris, D. C. Look, W. Kopp, J. Klem, H. Morkoç

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	423-425
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	4
DOIs	https://doi.org/10.1063/1.96132
State	Published - 1985

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.96132

Cite this

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title = "Theoretical and experimental capacitance-voltage behavior of Al 0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy",

author = "Norris, \{George B.\} and Look, \{D. C.\} and W. Kopp and J. Klem and H. Morko{\c c}",

year = "1985",

doi = "10.1063/1.96132",

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volume = "47",

pages = "423--425",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Theoretical and experimental capacitance-voltage behavior of Al 0.3Ga0.7As/GaAs modulation-doped heterojunctions

T2 - Relation of conduction-band discontinuity to donor energy

AU - Norris, George B.

AU - Look, D. C.

AU - Kopp, W.

AU - Klem, J.

AU - Morkoç, H.

PY - 1985

Y1 - 1985

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DO - 10.1063/1.96132

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AN - SCOPUS:0006339453

SN - 0003-6951

VL - 47

SP - 423

EP - 425

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

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Theoretical and experimental capacitance-voltage behavior of Al 0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy

ASJC Scopus Subject Areas

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Theoretical and experimental capacitance-voltage behavior of Al _0.3Ga_0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy