Thermally stimulated current trap in GaN

D. C. Look; Z. Q. Fang; W. Kim; Ö Aktas; A. Botchkarev; A. Salvador; H. Morkoç

doi:10.1063/1.116613

Thermally stimulated current trap in GaN

D. C. Look, Z. Q. Fang, W. Kim, Ö Aktas, A. Botchkarev, A. Salvador, H. Morkoç

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3775-3777
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	26
DOIs	https://doi.org/10.1063/1.116613
State	Published - 1996

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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@article{108c2ba40e054484a235cca12a8d4cb9,

title = "Thermally stimulated current trap in GaN",

author = "Look, \{D. C.\} and Fang, \{Z. Q.\} and W. Kim and {\"O} Aktas and A. Botchkarev and A. Salvador and H. Morko{\c c}",

year = "1996",

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language = "English",

volume = "68",

pages = "3775--3777",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Thermally stimulated current trap in GaN

AU - Look, D. C.

AU - Fang, Z. Q.

AU - Kim, W.

AU - Aktas, Ö

AU - Botchkarev, A.

AU - Salvador, A.

AU - Morkoç, H.

PY - 1996

Y1 - 1996

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DO - 10.1063/1.116613

M3 - Article

AN - SCOPUS:0001651338

SN - 0003-6951

VL - 68

SP - 3775

EP - 3777

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Thermally stimulated current trap in GaN

ASJC Scopus Subject Areas

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