THz Characterization of ITO Films on P-Si Substrates

E. R. Brown; W. D. Zhang; H. Chen; G. T. Mearini

THz Characterization of ITO Films on P-Si Substrates

E. R. Brown, W. D. Zhang, H. Chen, G. T. Mearini

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports broadband THz free-space transmission measurements and modeling of indium-tin-oxide (ITO) thin films on p-doped Si substrates. Two such samples having ITO thickness of 50 and 100 nm, and DC sheet conductance 260 and 56Ω/sq, respectively, were characterized between 0.2 and 1.2 THz using a frequency-domain spectrometer. The 50-nm-film sample displayed very flat transmittance over the 1-THz bandwidth, suggesting it is close to the critical THz sheet conductance that suppresses multi-pass interference and thereby achieves THz passive equalization. This is consistent with a simple transmission-line (TEM wave) model of the propagation. Also, the value of THz sheet conductance that best fits the transmittance data is roughly 50% higher than the dc value for both samples, suggesting that the ac conductivity is non-Drudian.

Original language	English
Title of host publication	PIERS 2015 Prague - Progress In Electromagnetics Research Symposium, Proceedings
Publisher	Electromagnetics Academy
Pages	1182-1186
Number of pages	5
ISBN (Electronic)	9781934142301
State	Published - 2015

Publication series

Name	Progress in Electromagnetics Research Symposium
Volume	2015-January
ISSN (Print)	1559-9450
ISSN (Electronic)	1931-7360

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Keywords

ITO Films
Tetrahertz spectroscopy

Disciplines

Physics

Cite this

THz Characterization of ITO Films on P-Si Substrates. / Brown, E. R.; Zhang, W. D.; Chen, H. et al.
PIERS 2015 Prague - Progress In Electromagnetics Research Symposium, Proceedings. Electromagnetics Academy, 2015. p. 1182-1186 (Progress in Electromagnetics Research Symposium; Vol. 2015-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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title = "THz Characterization of ITO Films on P-Si Substrates",

abstract = "This paper reports broadband THz free-space transmission measurements and modeling of indium-tin-oxide (ITO) thin films on p-doped Si substrates. Two such samples having ITO thickness of 50 and 100 nm, and DC sheet conductance 260 and 56Ω/sq, respectively, were characterized between 0.2 and 1.2 THz using a frequency-domain spectrometer. The 50-nm-film sample displayed very flat transmittance over the 1-THz bandwidth, suggesting it is close to the critical THz sheet conductance that suppresses multi-pass interference and thereby achieves THz passive equalization. This is consistent with a simple transmission-line (TEM wave) model of the propagation. Also, the value of THz sheet conductance that best fits the transmittance data is roughly 50\% higher than the dc value for both samples, suggesting that the ac conductivity is non-Drudian.",

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publisher = "Electromagnetics Academy",

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T1 - THz Characterization of ITO Films on P-Si Substrates

AU - Brown, E. R.

AU - Zhang, W. D.

AU - Chen, H.

AU - Mearini, G. T.

PY - 2015

Y1 - 2015

N2 - This paper reports broadband THz free-space transmission measurements and modeling of indium-tin-oxide (ITO) thin films on p-doped Si substrates. Two such samples having ITO thickness of 50 and 100 nm, and DC sheet conductance 260 and 56Ω/sq, respectively, were characterized between 0.2 and 1.2 THz using a frequency-domain spectrometer. The 50-nm-film sample displayed very flat transmittance over the 1-THz bandwidth, suggesting it is close to the critical THz sheet conductance that suppresses multi-pass interference and thereby achieves THz passive equalization. This is consistent with a simple transmission-line (TEM wave) model of the propagation. Also, the value of THz sheet conductance that best fits the transmittance data is roughly 50% higher than the dc value for both samples, suggesting that the ac conductivity is non-Drudian.

AB - This paper reports broadband THz free-space transmission measurements and modeling of indium-tin-oxide (ITO) thin films on p-doped Si substrates. Two such samples having ITO thickness of 50 and 100 nm, and DC sheet conductance 260 and 56Ω/sq, respectively, were characterized between 0.2 and 1.2 THz using a frequency-domain spectrometer. The 50-nm-film sample displayed very flat transmittance over the 1-THz bandwidth, suggesting it is close to the critical THz sheet conductance that suppresses multi-pass interference and thereby achieves THz passive equalization. This is consistent with a simple transmission-line (TEM wave) model of the propagation. Also, the value of THz sheet conductance that best fits the transmittance data is roughly 50% higher than the dc value for both samples, suggesting that the ac conductivity is non-Drudian.

KW - ITO Films

KW - Tetrahertz spectroscopy

UR - https://www.scopus.com/pages/publications/84947220562

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M3 - Conference contribution

AN - SCOPUS:84947220562

T3 - Progress in Electromagnetics Research Symposium

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EP - 1186

BT - PIERS 2015 Prague - Progress In Electromagnetics Research Symposium, Proceedings

PB - Electromagnetics Academy

ER -

THz Characterization of ITO Films on P-Si Substrates

Abstract

Publication series

ASJC Scopus Subject Areas

Keywords

Disciplines

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Cite this