TY - GEN
T1 - THz Performance of 1550-nm-Driven Photoconductive Switches Made From GaAs:Er With ErAs Quantum Dots
AU - Mingardi, A.
AU - Zhang, W. D.
AU - Brown, E. R.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/2
Y1 - 2017/7/2
N2 - Ultrafast 1550-nm extrinsic photoconductivity in GaAs:Er makes it possible to fabricate THz photoconductive devices having performance comparable to GaAs:Er devices based on traditional 780-nm intrinsic photoconductivity. This paper addresses the effect of Er doping concentration and its associated ErAs quantum-dot formation on THz device performance, focusing on photoconductive switches.
AB - Ultrafast 1550-nm extrinsic photoconductivity in GaAs:Er makes it possible to fabricate THz photoconductive devices having performance comparable to GaAs:Er devices based on traditional 780-nm intrinsic photoconductivity. This paper addresses the effect of Er doping concentration and its associated ErAs quantum-dot formation on THz device performance, focusing on photoconductive switches.
UR - https://www.scopus.com/pages/publications/85045263548
UR - https://www.scopus.com/inward/citedby.url?scp=85045263548&partnerID=8YFLogxK
U2 - 10.1109/NAECON.2017.8268796
DO - 10.1109/NAECON.2017.8268796
M3 - Conference contribution
AN - SCOPUS:85045263548
T3 - Proceedings of the IEEE National Aerospace Electronics Conference, NAECON
SP - 332
EP - 334
BT - 2017 IEEE National Aerospace and Electronics Conference, NAECON 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE National Aerospace and Electronics Conference, NAECON 2017
Y2 - 27 June 2017 through 30 June 2017
ER -