TY - GEN
T1 - THz Photoconductivity in GaAs: ER at 1550 nm, and Comparison With Cross-Gap Performance
AU - Brown, E. R.
AU - Zhang, W. D.
AU - Feldman, A.
AU - Harvey, T.
AU - Mirin, R.
N1 - Publisher Copyright:
© OSA 2016.
PY - 2016/8/15
Y1 - 2016/8/15
N2 - This paper summarizes research aimed at understanding the sub-bandgap ultrafast photoconductivity (~1550 nm) in heavily doped GaAs:Er, and why it is comparable in strength and THz performance to traditional cross-gap (≈800 nm) performance.
AB - This paper summarizes research aimed at understanding the sub-bandgap ultrafast photoconductivity (~1550 nm) in heavily doped GaAs:Er, and why it is comparable in strength and THz performance to traditional cross-gap (≈800 nm) performance.
UR - https://www.scopus.com/pages/publications/85165783039
UR - https://www.scopus.com/inward/citedby.url?scp=85165783039&partnerID=8YFLogxK
U2 - 10.1364/LAOP.2016.LW2B.2
DO - 10.1364/LAOP.2016.LW2B.2
M3 - Conference contribution
AN - SCOPUS:85165783039
SN - 9781943580163
T3 - Optics InfoBase Conference Papers
BT - Latin America Optics and Photonics Conference, LAOP 2016
PB - Optica Publishing Group (formerly OSA)
T2 - Latin America Optics and Photonics Conference, LAOP 2016
Y2 - 22 August 2016 through 26 August 2016
ER -