Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes

D. A. Redfern; W. Fang; C. A. Musca; J. M. Dell; L. Faraone

doi:10.1109/COMMAD.2000.1022918

Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes

D. A. Redfern, W. Fang, C. A. Musca, J. M. Dell, L. Faraone

Mathematics and Statistics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Correct placement of the p-n junction depth of diodes in HgCdTe infrared focal plane arrays is critical for ensuring the highest performance of diodes in the array. To date, most methods of determining the junction depth in HgCdTe have been destructive, based around wet chemical etching of the sample until the n-region has disappeared. In this paper we present some introductory work on the application of laser beam induced current, a non-destructive characterisation technique, to a specially designed junction depth test structure. The test structure has small geometric dimensions, which enables the peak magnitude of the LBIC signal to be sensitive to variations in the depth of the p-n junction.

Original language	American English
Title of host publication	COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard D. Broekman, Brian F. Usher, John D. Riley
Publisher	IEEE
Pages	169-172
Number of pages	4
ISBN (Print)	0-7803-6698-0
DOIs	https://doi.org/10.1109/COMMAD.2000.1022918
State	Published - Dec 6 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: Dec 6 2000 → Dec 8 2000

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	12/6/00 → 12/8/00

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Keywords

II-VI smiconductors
Mercury compounds
OBIC
P-n junctions
cadium compounds
focal planes
laser beams
nondestructive testing
photodiodes

Disciplines

Optics
Electrical and Electronics
Materials Science and Engineering

Access to Document

10.1109/COMMAD.2000.1022918License: Unspecified

Cite this

Redfern, D. A., Fang, W., Musca, C. A., Dell, J. M., & Faraone, L. (2000). Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 169-172). Article 1022918 IEEE. https://doi.org/10.1109/COMMAD.2000.1022918

Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes. / Redfern, D. A.; Fang, W.; Musca, C. A. et al.
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard D. Broekman; Brian F. Usher; John D. Riley. IEEE, 2000. p. 169-172 1022918.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Redfern, DA, Fang, W, Musca, CA, Dell, JM & Faraone, L 2000, Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes. in LD Broekman, BF Usher & JD Riley (eds), COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices., 1022918, IEEE, pp. 169-172, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 12/6/00. https://doi.org/10.1109/COMMAD.2000.1022918

Redfern DA, Fang W, Musca CA, Dell JM, Faraone L. Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes. In Broekman LD, Usher BF, Riley JD, editors, COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE. 2000. p. 169-172. 1022918 doi: 10.1109/COMMAD.2000.1022918

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title = "Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes",

abstract = " Correct placement of the p-n junction depth of diodes in HgCdTe infrared focal plane arrays is critical for ensuring the highest performance of diodes in the array. To date, most methods of determining the junction depth in HgCdTe have been destructive, based around wet chemical etching of the sample until the n-region has disappeared. In this paper we present some introductory work on the application of laser beam induced current, a non-destructive characterisation technique, to a specially designed junction depth test structure. The test structure has small geometric dimensions, which enables the peak magnitude of the LBIC signal to be sensitive to variations in the depth of the p-n junction.",

keywords = "II-VI smiconductors, Mercury compounds, OBIC, P-n junctions, cadium compounds, focal planes, laser beams, nondestructive testing, photodiodes",

author = "Redfern, {D. A.} and W. Fang and Musca, {C. A.} and Dell, {J. M.} and L. Faraone",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

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AU - Fang, W.

AU - Musca, C. A.

AU - Dell, J. M.

AU - Faraone, L.

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N2 - Correct placement of the p-n junction depth of diodes in HgCdTe infrared focal plane arrays is critical for ensuring the highest performance of diodes in the array. To date, most methods of determining the junction depth in HgCdTe have been destructive, based around wet chemical etching of the sample until the n-region has disappeared. In this paper we present some introductory work on the application of laser beam induced current, a non-destructive characterisation technique, to a specially designed junction depth test structure. The test structure has small geometric dimensions, which enables the peak magnitude of the LBIC signal to be sensitive to variations in the depth of the p-n junction.

AB - Correct placement of the p-n junction depth of diodes in HgCdTe infrared focal plane arrays is critical for ensuring the highest performance of diodes in the array. To date, most methods of determining the junction depth in HgCdTe have been destructive, based around wet chemical etching of the sample until the n-region has disappeared. In this paper we present some introductory work on the application of laser beam induced current, a non-destructive characterisation technique, to a specially designed junction depth test structure. The test structure has small geometric dimensions, which enables the peak magnitude of the LBIC signal to be sensitive to variations in the depth of the p-n junction.

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Towards a Laser Beam Induced Current Test Structure for Nondestructive Determination of Junction Depth in HgCdTe Photodiodes

Abstract

Conference

ASJC Scopus Subject Areas

Keywords

Disciplines

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